Active feedback control of reactive sputtering AlN thin film fro FBAR

Active feedback control of reactive sputtering AlN thin film fro FBAR

AlN thin films with high c-axis orientation are deposited by DC reactive magnetron sputtering and active feedback control system. Based on the analysis of the Berg hysteresis model, the authors analyze the technology parameter influence on the hysteresis effect, including pumping speed, temperature...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Dong Shu-rong
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Electron emission
Feedback control
Film bulk acoustic resonators
Hysteresis
Magnetic analysis
Radio frequency
Sputtering
Stability
Substrates
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Beschreibung
Zusammenfassung:AlN thin films with high c-axis orientation are deposited by DC reactive magnetron sputtering and active feedback control system. Based on the analysis of the Berg hysteresis model, the authors analyze the technology parameter influence on the hysteresis effect, including pumping speed, temperature of substrate and target, input power, target to substrate distance and area of target. A new active feedback control method and some improvement to eliminate hysteresis effect are presented to quickly depositing AlN thin film with high c-axis oriented
DOI:10.1109/ICSICT.2006.306201