Bias Temperature Instability in MOSFETs with Atomic-Layer-Deposited Si-Nitride/SiO2 Stack Gate Dielectrics

Bias Temperature Instability in MOSFETs with Atomic-Layer-Deposited Si-Nitride/SiO2 Stack Gate Dielectrics

Compared with conventional SiON MOSFETs, p + -poly-Si gated MOSFETs with atomic-layer-deposited Si-nitride/SiO 2 stack gate dielectrics exhibit quite different bias temperature instability (BTI) behaviors: NMOS under positive BT stress degrades significantly with the stress voltage increasing; PMOS...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shiyang Zhu, Nakajima, A., Ohashi, T., Miyake, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
Degradation
Dielectrics
MOS devices
MOSFETs
Niobium compounds
Nitrogen
Stress
Temperature
Titanium compounds
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Compared with conventional SiON MOSFETs, p + -poly-Si gated MOSFETs with atomic-layer-deposited Si-nitride/SiO 2 stack gate dielectrics exhibit quite different bias temperature instability (BTI) behaviors: NMOS under positive BT stress degrades significantly with the stress voltage increasing; PMOS under negative BT stress exhibits a turnaround threshold voltage shift; etc. The abnormal BTI behaviors indicate the existence of preexisting traps in the stack film, most probably at the SiN/SiO 2 interface
DOI:10.1109/ICSICT.2006.306701