Future trends in charge trapping memories

Charge trapping memories offer advantages for scaling data flash memories in the sub 50nm groundrule. This paper reviews the progress of the main concepts in charge trapping, NROM and SONOS. Both have undergone significant new developments, like the 4 bits/cell for the NROM and the introduction of n...

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Bibliographische Detailangaben

Hauptverfasser:	Kuesters, K.-H., Ludwig, C., Mikolajick, T., Nagel, N., Specht, M., Pissors, V., Schulze, N., Stein, E., Willer, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Costs Dielectric materials Electron traps Flash memory High K dielectric materials High-K gate dielectrics Nonvolatile memory Production SONOS devices Technological innovation
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