Future trends in charge trapping memories

Future trends in charge trapping memories

Charge trapping memories offer advantages for scaling data flash memories in the sub 50nm groundrule. This paper reviews the progress of the main concepts in charge trapping, NROM and SONOS. Both have undergone significant new developments, like the 4 bits/cell for the NROM and the introduction of n...

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Hauptverfasser: Kuesters, K.-H., Ludwig, C., Mikolajick, T., Nagel, N., Specht, M., Pissors, V., Schulze, N., Stein, E., Willer, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Costs
Dielectric materials
Electron traps
Flash memory
High K dielectric materials
High-K gate dielectrics
Nonvolatile memory
Production
SONOS devices
Technological innovation
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Zusammenfassung:Charge trapping memories offer advantages for scaling data flash memories in the sub 50nm groundrule. This paper reviews the progress of the main concepts in charge trapping, NROM and SONOS. Both have undergone significant new developments, like the 4 bits/cell for the NROM and the introduction of new materials for SONOS and new cell structures, e.g. including Fin-Fets. Depending on the progress during the next years these concepts will be even more able to compete with the still dominating floating gate techniques
DOI:10.1109/ICSICT.2006.306473