Study of re-sputtering effect on metallization for Cu interconnect

Study of re-sputtering effect on metallization for Cu interconnect

This paper is related with the barrier-and-seed(B/S) process of Cu metallization, discussed the re-sputtering function of barrier process, and disclosed the factors that influence the re-sputtering process. A scheme is proposed to improve the performance of the barrier and seed process.

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Bibliographische Detailangaben
Hauptverfasser: Zhang, Jiwei, Cheng, Xiu-Lan, Wu, Ting-Bin, Ni, Bai-Bing, Jiang, Ronnie, Liu, En-Feng, Huang, Qi-Yu, Zhou, Hua
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Electric variables measurement
Electrical resistance measurement
Electrons
Metallization
Probes
Surface impedance
Testing
Thickness measurement
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Beschreibung
Zusammenfassung:This paper is related with the barrier-and-seed(B/S) process of Cu metallization, discussed the re-sputtering function of barrier process, and disclosed the factors that influence the re-sputtering process. A scheme is proposed to improve the performance of the barrier and seed process.
DOI:10.1109/ICSICT.2006.306221