Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The S...
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| creator | Haizhou Yin Ren, Z. Saenger, K.L. Hovel, H.J. de Souza, J.P. Ott, J.A. Zhang, R. Bedell, S.W. Pfeiffer, G. Bendernagel, R. Chan, V. Sadana, D.K. Sung, C.Y. Khare, M. Ieong, M. Shahidi, G. |
| description | Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20% |
| doi_str_mv | 10.1109/ICSICT.2006.306119 |
| format | Conference Proceeding |
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The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20%</abstract><doi>10.1109/ICSICT.2006.306119</doi><tpages>3</tpages></addata></record> |
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| identifier | ISBN: 9781424401604 |
| ispartof | 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.136-138 |
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| language | eng |
| recordid | cdi_ieee_primary_4098041 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitive sensors Degradation Epitaxial growth Implants Insulation Solids Stress Tensile strain Uniaxial strain |
| title | Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates |
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