Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates

Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates

Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The S...

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Hauptverfasser: Haizhou Yin, Ren, Z., Saenger, K.L., Hovel, H.J., de Souza, J.P., Ott, J.A., Zhang, R., Bedell, S.W., Pfeiffer, G., Bendernagel, R., Chan, V., Sadana, D.K., Sung, C.Y., Khare, M., Ieong, M., Shahidi, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Capacitive sensors
Degradation
Epitaxial growth
Implants
Insulation
Solids
Stress
Tensile strain
Uniaxial strain
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Zusammenfassung:Uniaxial strain relaxation of ultra-thin biaxial-tensile SSDOI is realized by ion-implant amorphization and solid phase epitaxy (II/SPE). The selective full amorphization in the thin SSDOI region, between raised source/drain (RSD) and channel, induces uniaxial strain relaxation in the channel. The SSDOI uniaxial strain relaxation enhances PFETs drive current by more than 20%
DOI:10.1109/ICSICT.2006.306119