Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 42 |
|---|---|
| container_issue | |
| container_start_page | 41 |
| container_title | |
| container_volume | |
| creator | Chan, K. K. Yang, M. Shi, L. Kumar, A. Ott, J. A Patel, J. Schultz, R. Kry, H. Zhang, Y. Sikorski, E. Graham, W. To, B. Medd, S. Canaperi, D. Newbury, J. Scerbo, C. Meyer, R. D'Emic, C. Ieong, M. |
| description | |
| doi_str_mv | 10.1109/DRC.2006.305110 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4097527</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4097527</ieee_id><sourcerecordid>4097527</sourcerecordid><originalsourceid>FETCH-ieee_primary_40975273</originalsourceid><addsrcrecordid>eNp9ij1PwzAURR9fEgEyM7D4DyQ8x3Zsr6RFZUCVaBFj5VIXjIyDbFco_x4Pnbm60pXOuQC3FFtKUd_PXoa2Q-xbhqKAE7hCqZBpybU4harrOTa9EuwMal3E0Sl-DhUVXDVMSryEOqUvLJGK0k5UsF45797HQEqfQjp4k8dIhuflivy6_EkW0za6HRnilLLxZBmdDdlkV-6vyYUPMhsPW2_Jm9nbSB7GsCvwBi72xidbH_ca7h7n62HROGvt5ie6bxOnDUctRSfZ__YPQsJFdw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chan, K. K. ; Yang, M. ; Shi, L. ; Kumar, A. ; Ott, J. A ; Patel, J. ; Schultz, R. ; Kry, H. ; Zhang, Y. ; Sikorski, E. ; Graham, W. ; To, B. ; Medd, S. ; Canaperi, D. ; Newbury, J. ; Scerbo, C. ; Meyer, R. ; D'Emic, C. ; Ieong, M.</creator><creatorcontrib>Chan, K. K. ; Yang, M. ; Shi, L. ; Kumar, A. ; Ott, J. A ; Patel, J. ; Schultz, R. ; Kry, H. ; Zhang, Y. ; Sikorski, E. ; Graham, W. ; To, B. ; Medd, S. ; Canaperi, D. ; Newbury, J. ; Scerbo, C. ; Meyer, R. ; D'Emic, C. ; Ieong, M.</creatorcontrib><identifier>ISSN: 1548-3770</identifier><identifier>ISBN: 9780780397484</identifier><identifier>ISBN: 0780397487</identifier><identifier>EISSN: 2640-6853</identifier><identifier>EISBN: 0780397495</identifier><identifier>EISBN: 9780780397491</identifier><identifier>DOI: 10.1109/DRC.2006.305110</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS process ; CMOS technology ; Etching ; Fabrication ; Oxidation ; Silicon on insulator technology ; Substrates ; Temperature ; Voltage ; Wafer bonding</subject><ispartof>2006 64th Device Research Conference, 2006, p.41-42</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4097527$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4097527$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chan, K. K.</creatorcontrib><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Shi, L.</creatorcontrib><creatorcontrib>Kumar, A.</creatorcontrib><creatorcontrib>Ott, J. A</creatorcontrib><creatorcontrib>Patel, J.</creatorcontrib><creatorcontrib>Schultz, R.</creatorcontrib><creatorcontrib>Kry, H.</creatorcontrib><creatorcontrib>Zhang, Y.</creatorcontrib><creatorcontrib>Sikorski, E.</creatorcontrib><creatorcontrib>Graham, W.</creatorcontrib><creatorcontrib>To, B.</creatorcontrib><creatorcontrib>Medd, S.</creatorcontrib><creatorcontrib>Canaperi, D.</creatorcontrib><creatorcontrib>Newbury, J.</creatorcontrib><creatorcontrib>Scerbo, C.</creatorcontrib><creatorcontrib>Meyer, R.</creatorcontrib><creatorcontrib>D'Emic, C.</creatorcontrib><creatorcontrib>Ieong, M.</creatorcontrib><title>Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding</title><title>2006 64th Device Research Conference</title><addtitle>DRC</addtitle><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Etching</subject><subject>Fabrication</subject><subject>Oxidation</subject><subject>Silicon on insulator technology</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Voltage</subject><subject>Wafer bonding</subject><issn>1548-3770</issn><issn>2640-6853</issn><isbn>9780780397484</isbn><isbn>0780397487</isbn><isbn>0780397495</isbn><isbn>9780780397491</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9ij1PwzAURR9fEgEyM7D4DyQ8x3Zsr6RFZUCVaBFj5VIXjIyDbFco_x4Pnbm60pXOuQC3FFtKUd_PXoa2Q-xbhqKAE7hCqZBpybU4harrOTa9EuwMal3E0Sl-DhUVXDVMSryEOqUvLJGK0k5UsF45797HQEqfQjp4k8dIhuflivy6_EkW0za6HRnilLLxZBmdDdlkV-6vyYUPMhsPW2_Jm9nbSB7GsCvwBi72xidbH_ca7h7n62HROGvt5ie6bxOnDUctRSfZ__YPQsJFdw</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Chan, K. K.</creator><creator>Yang, M.</creator><creator>Shi, L.</creator><creator>Kumar, A.</creator><creator>Ott, J. A</creator><creator>Patel, J.</creator><creator>Schultz, R.</creator><creator>Kry, H.</creator><creator>Zhang, Y.</creator><creator>Sikorski, E.</creator><creator>Graham, W.</creator><creator>To, B.</creator><creator>Medd, S.</creator><creator>Canaperi, D.</creator><creator>Newbury, J.</creator><creator>Scerbo, C.</creator><creator>Meyer, R.</creator><creator>D'Emic, C.</creator><creator>Ieong, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200606</creationdate><title>Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding</title><author>Chan, K. K. ; Yang, M. ; Shi, L. ; Kumar, A. ; Ott, J. A ; Patel, J. ; Schultz, R. ; Kry, H. ; Zhang, Y. ; Sikorski, E. ; Graham, W. ; To, B. ; Medd, S. ; Canaperi, D. ; Newbury, J. ; Scerbo, C. ; Meyer, R. ; D'Emic, C. ; Ieong, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_40975273</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Etching</topic><topic>Fabrication</topic><topic>Oxidation</topic><topic>Silicon on insulator technology</topic><topic>Substrates</topic><topic>Temperature</topic><topic>Voltage</topic><topic>Wafer bonding</topic><toplevel>online_resources</toplevel><creatorcontrib>Chan, K. K.</creatorcontrib><creatorcontrib>Yang, M.</creatorcontrib><creatorcontrib>Shi, L.</creatorcontrib><creatorcontrib>Kumar, A.</creatorcontrib><creatorcontrib>Ott, J. A</creatorcontrib><creatorcontrib>Patel, J.</creatorcontrib><creatorcontrib>Schultz, R.</creatorcontrib><creatorcontrib>Kry, H.</creatorcontrib><creatorcontrib>Zhang, Y.</creatorcontrib><creatorcontrib>Sikorski, E.</creatorcontrib><creatorcontrib>Graham, W.</creatorcontrib><creatorcontrib>To, B.</creatorcontrib><creatorcontrib>Medd, S.</creatorcontrib><creatorcontrib>Canaperi, D.</creatorcontrib><creatorcontrib>Newbury, J.</creatorcontrib><creatorcontrib>Scerbo, C.</creatorcontrib><creatorcontrib>Meyer, R.</creatorcontrib><creatorcontrib>D'Emic, C.</creatorcontrib><creatorcontrib>Ieong, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chan, K. K.</au><au>Yang, M.</au><au>Shi, L.</au><au>Kumar, A.</au><au>Ott, J. A</au><au>Patel, J.</au><au>Schultz, R.</au><au>Kry, H.</au><au>Zhang, Y.</au><au>Sikorski, E.</au><au>Graham, W.</au><au>To, B.</au><au>Medd, S.</au><au>Canaperi, D.</au><au>Newbury, J.</au><au>Scerbo, C.</au><au>Meyer, R.</au><au>D'Emic, C.</au><au>Ieong, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding</atitle><btitle>2006 64th Device Research Conference</btitle><stitle>DRC</stitle><date>2006-06</date><risdate>2006</risdate><spage>41</spage><epage>42</epage><pages>41-42</pages><issn>1548-3770</issn><eissn>2640-6853</eissn><isbn>9780780397484</isbn><isbn>0780397487</isbn><eisbn>0780397495</eisbn><eisbn>9780780397491</eisbn><pub>IEEE</pub><doi>10.1109/DRC.2006.305110</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1548-3770 |
| ispartof | 2006 64th Device Research Conference, 2006, p.41-42 |
| issn | 1548-3770 2640-6853 |
| language | eng |
| recordid | cdi_ieee_primary_4097527 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process CMOS technology Etching Fabrication Oxidation Silicon on insulator technology Substrates Temperature Voltage Wafer bonding |
| title | Silicon on Insulator CMOS with Hybrid Crystal Orientation Using Double Wafer Bonding |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A08%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Silicon%20on%20Insulator%20CMOS%20with%20Hybrid%20Crystal%20Orientation%20Using%20Double%20Wafer%20Bonding&rft.btitle=2006%2064th%20Device%20Research%20Conference&rft.au=Chan,%20K.%20K.&rft.date=2006-06&rft.spage=41&rft.epage=42&rft.pages=41-42&rft.issn=1548-3770&rft.eissn=2640-6853&rft.isbn=9780780397484&rft.isbn_list=0780397487&rft_id=info:doi/10.1109/DRC.2006.305110&rft_dat=%3Cieee_6IE%3E4097527%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=0780397495&rft.eisbn_list=9780780397491&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4097527&rfr_iscdi=true |