Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs

Design, construction and performance of several cryogenically-coolable millimeter-wave amplifiers for radio astronomy applications, using AlInAs/GaInAs/InP HEMTs, are presented. The examples include a 40-50 GHz amplifier with an average noise temperature of about 15 K and a 60-80 GHz amplifier yield...

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Hauptverfasser: Pospieszalski, M.W., Lakatosh, W.J., Nguyen, L.D., Lui, M., Takyiu Lin, Minh Le, Thompson, M.A., Delaney, M.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Cryogenics
Equivalent circuits
Extraterrestrial measurements
HEMTs
Indium phosphide
MODFETs
Observatories
Radio astronomy
Temperature measurement
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Beschreibung
Zusammenfassung:Design, construction and performance of several cryogenically-coolable millimeter-wave amplifiers for radio astronomy applications, using AlInAs/GaInAs/InP HEMTs, are presented. The examples include a 40-50 GHz amplifier with an average noise temperature of about 15 K and a 60-80 GHz amplifier yielding a laboratory receiver noise temperature of 37 K at 60 GHz and 50 K at 75 GHz.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1995.406168