3-Dimensional Analysis on the GIDL Current of Body-tied Triple Gate FinFET

Triple gate FinFET is emerging as a promising candidate for the future CMOS device structures because of its immunity to short-channel effect. However, the suppression of GIDL is a significant challenge for its application. In this paper, we discuss the characteristics of GIDL on FinFET and extensiv...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hyun-Sook Byun, Won-Sok Lee, Jin-Woo Lee, Keun-Ho Lee, Young-kwan Park, Jeong-Taek Kong
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	CMOS technology Computer aided engineering Controllability Doping profiles FinFETs Guidelines Immune system Leakage current Threshold voltage Tunneling
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