3-Dimensional Analysis on the GIDL Current of Body-tied Triple Gate FinFET

3-Dimensional Analysis on the GIDL Current of Body-tied Triple Gate FinFET

Triple gate FinFET is emerging as a promising candidate for the future CMOS device structures because of its immunity to short-channel effect. However, the suppression of GIDL is a significant challenge for its application. In this paper, we discuss the characteristics of GIDL on FinFET and extensiv...

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Bibliographische Detailangaben
Hauptverfasser: Hyun-Sook Byun, Won-Sok Lee, Jin-Woo Lee, Keun-Ho Lee, Young-kwan Park, Jeong-Taek Kong
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
CMOS technology
Computer aided engineering
Controllability
Doping profiles
FinFETs
Guidelines
Immune system
Leakage current
Threshold voltage
Tunneling
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Beschreibung
Zusammenfassung:Triple gate FinFET is emerging as a promising candidate for the future CMOS device structures because of its immunity to short-channel effect. However, the suppression of GIDL is a significant challenge for its application. In this paper, we discuss the characteristics of GIDL on FinFET and extensively analyze the influence of the device technology on GIDL. The analysis is expected to give guidelines to the future development of triple gate FinFET
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2006.282887