Active and Passive RF Device Compact Modeling in CMOS Technoloies

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is develop...

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Hauptverfasser:	Hyungcheol Shin, In Man Kang, Jong Wook Jeon, Joonho Gil
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	analytical thermal noise modeling CMOS technology Electrical resistance measurement Inductors Macro-modeling MOSFETs Non-quasi-static effect Radio frequency RF MOSFET modeling Semiconductor device modeling Silicon Substrate resistance Temperature dependence Three-port measurement Varactors Wideband
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Beschreibung
Zusammenfassung:	A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented
ISSN:	1946-1569 1946-1577
DOI:	10.1109/SISPAD.2006.282828