Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition

Low Temperature Microcrystalline Silicon Solar Cells Prepared by Hot-Wire Chemical Vapor Deposition

Intrinsic hydrogenated microcrystalline silicon (muc-Si:H) films were prepared by hot-wire chemical vapor deposition (HWCVD) using a graphite filament at a substrate temperature of 210degC. Films were characterized by Raman Spectroscopy, FTIR and electrical conductivity measurements with varying sil...

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Bibliographische Detailangaben
Hauptverfasser: Adachi, M.M., Tse, W.F.L., Karim, K.S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical vapor deposition
Conductive films
Conductivity measurement
Glass
Photovoltaic cells
Raman scattering
Semiconductor films
Silicon
Spectroscopy
Temperature
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Zusammenfassung:Intrinsic hydrogenated microcrystalline silicon (muc-Si:H) films were prepared by hot-wire chemical vapor deposition (HWCVD) using a graphite filament at a substrate temperature of 210degC. Films were characterized by Raman Spectroscopy, FTIR and electrical conductivity measurements with varying silane concentrations on glass substrates. Solar cells were fabricated in a glass/SnO 2 /pin/Al structure and device efficiency was measured to be 2.8%
ISSN:0160-8371
DOI:10.1109/WCPEC.2006.279800