Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon
The solidification microstructure and crystal orientation have been investigated for solar cell grade high purity polycrystalline silicon through a unidirectional solidification technique. In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progr...
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| creator | Miyahara, H. Nara, S. Ogi, K. |
| description | The solidification microstructure and crystal orientation have been investigated for solar cell grade high purity polycrystalline silicon through a unidirectional solidification technique. In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progresses. Furthermore, large columnar grains contain many twin boundaries. However, in above the critical velocity around 40times10 -6 m/s, equiaxed structure appears. A model of two-dimensional nucleation on the reentrant corner was established, and the critical nucleus could be estimated to be 70 % to 80 % of the radius of the general two-dimensional nucleus. The reduction of the critical radius and undercooling on the reentrant corner could influence on the priority growth direction and the enlargement of the grain size |
| doi_str_mv | 10.1109/WCPEC.2006.279401 |
| format | Conference Proceeding |
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In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progresses. Furthermore, large columnar grains contain many twin boundaries. However, in above the critical velocity around 40times10 -6 m/s, equiaxed structure appears. A model of two-dimensional nucleation on the reentrant corner was established, and the critical nucleus could be estimated to be 70 % to 80 % of the radius of the general two-dimensional nucleus. 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In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progresses. Furthermore, large columnar grains contain many twin boundaries. However, in above the critical velocity around 40times10 -6 m/s, equiaxed structure appears. A model of two-dimensional nucleation on the reentrant corner was established, and the critical nucleus could be estimated to be 70 % to 80 % of the radius of the general two-dimensional nucleus. The reduction of the critical radius and undercooling on the reentrant corner could influence on the priority growth direction and the enlargement of the grain size</description><subject>Crystal microstructure</subject><subject>Furnaces</subject><subject>Grain boundaries</subject><subject>Grain size</subject><subject>Morphology</subject><subject>Optical scattering</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic systems</subject><subject>Silicon</subject><subject>Temperature</subject><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><isbn>1424400171</isbn><isbn>9781424400171</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFj9tKAzEYhCMq2FYfQLzJC2z9_5x2cynreoCCxVbEqxKzCURiItkF6du7RcGrjxlmBoaQS4QlIujr13bdtUsGoJas1gLwiMxRMCEAsMbjf6H4CZlNgKrhNZ6R-TB8ADDgCmfkrfPe2ZFmT5-dS2MxaaTb75Bom0tyZaA50dtQpkzIyUS6yTH0wQdrDsaht85xb8t-GE2MITm6CTHYnM7JqTdxcBd_XJCXu27bPlSrp_vH9mZVBazlWPXKG4XWW8GMtcL3TW-4FKo3zkpmuHLaaO81onSi9upd6R6E1n76gpIJviBXv7vBObf7KuHTlP1OgNSNVPwH2d1VBQ</recordid><startdate>200605</startdate><enddate>200605</enddate><creator>Miyahara, H.</creator><creator>Nara, S.</creator><creator>Ogi, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200605</creationdate><title>Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon</title><author>Miyahara, H. ; Nara, S. ; Ogi, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d6fa61cfc42acc4fd8da3546daec52a36e9a9ff9115e47f6b69d0499f37115243</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Crystal microstructure</topic><topic>Furnaces</topic><topic>Grain boundaries</topic><topic>Grain size</topic><topic>Morphology</topic><topic>Optical scattering</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic systems</topic><topic>Silicon</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Miyahara, H.</creatorcontrib><creatorcontrib>Nara, S.</creatorcontrib><creatorcontrib>Ogi, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Miyahara, H.</au><au>Nara, S.</au><au>Ogi, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon</atitle><btitle>2006 IEEE 4th World Conference on Photovoltaic Energy Conference</btitle><stitle>WCPEC</stitle><date>2006-05</date><risdate>2006</risdate><volume>1</volume><spage>1219</spage><epage>1222</epage><pages>1219-1222</pages><issn>0160-8371</issn><isbn>1424400163</isbn><isbn>9781424400164</isbn><eisbn>1424400171</eisbn><eisbn>9781424400171</eisbn><abstract>The solidification microstructure and crystal orientation have been investigated for solar cell grade high purity polycrystalline silicon through a unidirectional solidification technique. In the solidification velocity range of 1.25-2.5times10 -6 m/s, the grain size enlarges as solidification progresses. Furthermore, large columnar grains contain many twin boundaries. However, in above the critical velocity around 40times10 -6 m/s, equiaxed structure appears. A model of two-dimensional nucleation on the reentrant corner was established, and the critical nucleus could be estimated to be 70 % to 80 % of the radius of the general two-dimensional nucleus. The reduction of the critical radius and undercooling on the reentrant corner could influence on the priority growth direction and the enlargement of the grain size</abstract><pub>IEEE</pub><doi>10.1109/WCPEC.2006.279401</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0160-8371 |
| ispartof | 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.1219-1222 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_4059856 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Crystal microstructure Furnaces Grain boundaries Grain size Morphology Optical scattering Photovoltaic cells Photovoltaic systems Silicon Temperature |
| title | Effect of Reentrant Twin Corners on Directional Solidification of Polycrystalline Silicon |
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