Reducing Charge Injection in Active-Matrix a-Si TFT Pixels
A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 441 |
|---|---|
| container_issue | |
| container_start_page | 440 |
| container_title | |
| container_volume | |
| creator | Ashtiani, S.J. Nathan, A. |
| description | A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved |
| doi_str_mv | 10.1109/LEOS.2006.279204 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4054246</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4054246</ieee_id><sourcerecordid>4054246</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d1d0c2ff682e8929ec7ef9ed5d96f8c3a20e59491e96ba1bcf68c7da25a6ea763</originalsourceid><addsrcrecordid>eNpVT01Lw0AUXL_AUnMXvOwf2Ph2k_143kpotRCp2NzLdvNSt9QoSZT23xvQi8PADMwwMIzdSkilBLwv56t1qgBMqiwqyM9YgtbByAy11u6cTZQ1RkibZRf_MqMv2WScUMKBk9cs6fs9jMh1rhAm7OGV6q8Q2x0v3ny3I75s9xSG-NHy2PLZ6L5JPPuhi0fuxTryalHxl3ikQ3_Drhp_6Cn50ymrFvOqeBLl6nFZzEoREQZRyxqCahrjFDlUSMFSg1TrGk3jQuYVkMYcJaHZerkNYzPY2ivtDXlrsim7-52NRLT57OK7706bHMYDucl-AKgqS9s</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Reducing Charge Injection in Active-Matrix a-Si TFT Pixels</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ashtiani, S.J. ; Nathan, A.</creator><creatorcontrib>Ashtiani, S.J. ; Nathan, A.</creatorcontrib><description>A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved</description><identifier>ISSN: 1092-8081</identifier><identifier>ISBN: 9780780395565</identifier><identifier>ISBN: 0780395565</identifier><identifier>EISSN: 2766-1733</identifier><identifier>EISBN: 9780780395558</identifier><identifier>EISBN: 0780395557</identifier><identifier>DOI: 10.1109/LEOS.2006.279204</identifier><language>eng</language><publisher>IEEE</publisher><subject>Active matrix liquid crystal displays ; Active matrix organic light emitting diodes ; Active matrix technology ; Amorphous silicon ; Backplanes ; Circuits ; Liquid crystal displays ; Switches ; Thin film transistors ; Voltage</subject><ispartof>LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006, p.440-441</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4054246$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4054246$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ashtiani, S.J.</creatorcontrib><creatorcontrib>Nathan, A.</creatorcontrib><title>Reducing Charge Injection in Active-Matrix a-Si TFT Pixels</title><title>LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society</title><addtitle>LEOS</addtitle><description>A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved</description><subject>Active matrix liquid crystal displays</subject><subject>Active matrix organic light emitting diodes</subject><subject>Active matrix technology</subject><subject>Amorphous silicon</subject><subject>Backplanes</subject><subject>Circuits</subject><subject>Liquid crystal displays</subject><subject>Switches</subject><subject>Thin film transistors</subject><subject>Voltage</subject><issn>1092-8081</issn><issn>2766-1733</issn><isbn>9780780395565</isbn><isbn>0780395565</isbn><isbn>9780780395558</isbn><isbn>0780395557</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVT01Lw0AUXL_AUnMXvOwf2Ph2k_143kpotRCp2NzLdvNSt9QoSZT23xvQi8PADMwwMIzdSkilBLwv56t1qgBMqiwqyM9YgtbByAy11u6cTZQ1RkibZRf_MqMv2WScUMKBk9cs6fs9jMh1rhAm7OGV6q8Q2x0v3ny3I75s9xSG-NHy2PLZ6L5JPPuhi0fuxTryalHxl3ikQ3_Drhp_6Cn50ymrFvOqeBLl6nFZzEoREQZRyxqCahrjFDlUSMFSg1TrGk3jQuYVkMYcJaHZerkNYzPY2ivtDXlrsim7-52NRLT57OK7706bHMYDucl-AKgqS9s</recordid><startdate>200610</startdate><enddate>200610</enddate><creator>Ashtiani, S.J.</creator><creator>Nathan, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200610</creationdate><title>Reducing Charge Injection in Active-Matrix a-Si TFT Pixels</title><author>Ashtiani, S.J. ; Nathan, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d1d0c2ff682e8929ec7ef9ed5d96f8c3a20e59491e96ba1bcf68c7da25a6ea763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Active matrix liquid crystal displays</topic><topic>Active matrix organic light emitting diodes</topic><topic>Active matrix technology</topic><topic>Amorphous silicon</topic><topic>Backplanes</topic><topic>Circuits</topic><topic>Liquid crystal displays</topic><topic>Switches</topic><topic>Thin film transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Ashtiani, S.J.</creatorcontrib><creatorcontrib>Nathan, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ashtiani, S.J.</au><au>Nathan, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Reducing Charge Injection in Active-Matrix a-Si TFT Pixels</atitle><btitle>LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society</btitle><stitle>LEOS</stitle><date>2006-10</date><risdate>2006</risdate><spage>440</spage><epage>441</epage><pages>440-441</pages><issn>1092-8081</issn><eissn>2766-1733</eissn><isbn>9780780395565</isbn><isbn>0780395565</isbn><eisbn>9780780395558</eisbn><eisbn>0780395557</eisbn><abstract>A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved</abstract><pub>IEEE</pub><doi>10.1109/LEOS.2006.279204</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1092-8081 |
| ispartof | LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006, p.440-441 |
| issn | 1092-8081 2766-1733 |
| language | eng |
| recordid | cdi_ieee_primary_4054246 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Active matrix liquid crystal displays Active matrix organic light emitting diodes Active matrix technology Amorphous silicon Backplanes Circuits Liquid crystal displays Switches Thin film transistors Voltage |
| title | Reducing Charge Injection in Active-Matrix a-Si TFT Pixels |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T03%3A32%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Reducing%20Charge%20Injection%20in%20Active-Matrix%20a-Si%20TFT%20Pixels&rft.btitle=LEOS%202006%20-%2019th%20Annual%20Meeting%20of%20the%20IEEE%20Lasers%20and%20Electro-Optics%20Society&rft.au=Ashtiani,%20S.J.&rft.date=2006-10&rft.spage=440&rft.epage=441&rft.pages=440-441&rft.issn=1092-8081&rft.eissn=2766-1733&rft.isbn=9780780395565&rft.isbn_list=0780395565&rft_id=info:doi/10.1109/LEOS.2006.279204&rft_dat=%3Cieee_6IE%3E4054246%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9780780395558&rft.eisbn_list=0780395557&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4054246&rfr_iscdi=true |