Reducing Charge Injection in Active-Matrix a-Si TFT Pixels

A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved

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Bibliographische Detailangaben
Hauptverfasser:	Ashtiani, S.J., Nathan, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Active matrix liquid crystal displays Active matrix organic light emitting diodes Active matrix technology Amorphous silicon Backplanes Circuits Liquid crystal displays Switches Thin film transistors Voltage
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Beschreibung
Zusammenfassung:	A technique for reducing charge injection in active-matrix amorphous silicon thin film transistor pixels is presented. Using a gate pulse with two falling rates, more than 50% reduction in the induced error voltage was achieved
ISSN:	1092-8081 2766-1733
DOI:	10.1109/LEOS.2006.279204