InGaN Light-Emitting Diode With Quasi-Quantum-Dot-Shaped Active Layer Using SiCN Interfacial Layer

A quasi-quantum-dot (QQD)-shaped InGaN-GaN multilple-quantum-well light-emitting diode (LED) was achieved using a silicon carbon nitride (SiCN) interfacial layer. QQDs with ~100-nm diameter and ~4-nm height were uniformly formed inside the InGaN active layer due to strain and affinity difference bet...

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Veröffentlicht in:	IEEE photonics technology letters 2007-01, Vol.19 (1), p.24-26
Hauptverfasser:	Eun-Hyun Park, Soo-Kun Jeon, Chang-Tae Kim, Dong-Hwan Kim, Joong-Seo Park, Ferguson, I.T., Tae-Kyung Yoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Affinity Atomic force microscopy Atomic layer deposition Atomic measurements Capacitive sensors Diffraction Force measurement Indium gallium nitrides Light emitting diodes Light-emitting diodes (LEDs) Mass spectroscopy quantum-well devices Qunatum dots semiconductor epitaxial layers semiconductor growth Silicon Silicon carbonitride Strain Surface chemistry Surface morphology X-ray diffraction X-rays
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Beschreibung
Zusammenfassung:	A quasi-quantum-dot (QQD)-shaped InGaN-GaN multilple-quantum-well light-emitting diode (LED) was achieved using a silicon carbon nitride (SiCN) interfacial layer. QQDs with ~100-nm diameter and ~4-nm height were uniformly formed inside the InGaN active layer due to strain and affinity difference between the InGaN and SiCN layer. The surface morphology and structural properties of QQD-LED were measured with atomic force microscopy, secondary ion mass spectrometry, and X-ray diffraction. Device performance of QQD-LEDs were evaluated and compared with normal LEDs. The QQD-LED showed ~15% higher photoluminescence intensity and ~10% higher optical output power
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2006.889000