Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET
This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of R...
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| creator | Feng Yong-sheng Liu Yuan-an Nan Jing-chang |
| description | This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis |
| doi_str_mv | 10.1109/CEEM.2006.258070 |
| format | Conference Proceeding |
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The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis</description><identifier>ISBN: 1424401836</identifier><identifier>ISBN: 9781424401833</identifier><identifier>DOI: 10.1109/CEEM.2006.258070</identifier><language>eng</language><publisher>IEEE</publisher><subject>Broadband amplifiers ; Equivalent circuits ; FETs ; Heat sinks ; LDMOS ; Mathematical model ; memory effect ; Packaging ; power amplifier ; Power amplifiers ; Radio frequency ; Radiofrequency amplifiers ; Temperature sensors</subject><ispartof>The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics, 2006, p.787-791</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4027402$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4027402$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Feng Yong-sheng</creatorcontrib><creatorcontrib>Liu Yuan-an</creatorcontrib><creatorcontrib>Nan Jing-chang</creatorcontrib><title>Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET</title><title>The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics</title><addtitle>CEEM</addtitle><description>This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis</description><subject>Broadband amplifiers</subject><subject>Equivalent circuits</subject><subject>FETs</subject><subject>Heat sinks</subject><subject>LDMOS</subject><subject>Mathematical model</subject><subject>memory effect</subject><subject>Packaging</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Temperature sensors</subject><isbn>1424401836</isbn><isbn>9781424401833</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjFFLwzAUhQMiqHPvgi_5A633JmnSPo7ZOaFlUufzSNIbVmntSAeyf29FDxzO4eNwGHtASBGheFqXZZ0KAJ2KLAcDV-wOlVAKMJf6hi2n6RNmyUIZxFvWNDSRjf7Ix8DLnvw5jsn-SHGwPa9pGOOFlyHM_HfQbPjb-E2Rr4ZT34Vubs5O1PLxi1fP9e6db8r9PbsOtp9o-Z8L9jHT9Tapdi-v61WVdGiyc2Jz70JmoXXYovaAQMbkUuZeamd1RiR8oFa5VmjQqigcIOpAWlmFGUq5YI9_vx0RHU6xG2y8HBQIM1v-AHT_S7Y</recordid><startdate>200608</startdate><enddate>200608</enddate><creator>Feng Yong-sheng</creator><creator>Liu Yuan-an</creator><creator>Nan Jing-chang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200608</creationdate><title>Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET</title><author>Feng Yong-sheng ; Liu Yuan-an ; Nan Jing-chang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a8cbf5a0db1d16c010e778338c36ba65ee2cfed4bd2606499b0116fe64a415133</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Broadband amplifiers</topic><topic>Equivalent circuits</topic><topic>FETs</topic><topic>Heat sinks</topic><topic>LDMOS</topic><topic>Mathematical model</topic><topic>memory effect</topic><topic>Packaging</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Temperature sensors</topic><toplevel>online_resources</toplevel><creatorcontrib>Feng Yong-sheng</creatorcontrib><creatorcontrib>Liu Yuan-an</creatorcontrib><creatorcontrib>Nan Jing-chang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Feng Yong-sheng</au><au>Liu Yuan-an</au><au>Nan Jing-chang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET</atitle><btitle>The 2006 4th Asia-Pacific Conference on Environmental Electromagnetics</btitle><stitle>CEEM</stitle><date>2006-08</date><risdate>2006</risdate><spage>787</spage><epage>791</epage><pages>787-791</pages><isbn>1424401836</isbn><isbn>9781424401833</isbn><abstract>This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis</abstract><pub>IEEE</pub><doi>10.1109/CEEM.2006.258070</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Broadband amplifiers Equivalent circuits FETs Heat sinks LDMOS Mathematical model memory effect Packaging power amplifier Power amplifiers Radio frequency Radiofrequency amplifiers Temperature sensors |
| title | Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET |
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