Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET

This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of R...

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Bibliographische Detailangaben
Hauptverfasser:	Feng Yong-sheng, Liu Yuan-an, Nan Jing-chang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Broadband amplifiers Equivalent circuits FETs Heat sinks LDMOS Mathematical model memory effect Packaging power amplifier Power amplifiers Radio frequency Radiofrequency amplifiers Temperature sensors
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Beschreibung
Zusammenfassung:	This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis
DOI:	10.1109/CEEM.2006.258070