1.55- \mum Range InAs-InP (100) Quantum-Dot Fabry-Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides

1.55- \mum Range InAs-InP (100) Quantum-Dot Fabry-Pérot and Ring Lasers Using Narrow Deeply Etched Ridge Waveguides

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The performance of the lasers appears not affected by sidewa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 2006-12, Vol.18 (24), p.2644-2646
Hauptverfasser: Barbarin, Y., Anantathanasarn, S., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., Notzel, R.
Format: Artikel
Sprache:eng
Schlagworte:
Etching
Integrated optics
Optical amplifiers
Optical waveguides
Quantum dot lasers
Quantum dots
quantum dots (QDs)
Ring lasers
Semiconductor lasers
Semiconductor optical amplifiers
Stimulated emission
waveguide bends
Waveguide lasers
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.887382