0.8-2.5 GHz SiC Power Amplifiers

0.8-2.5 GHz SiC Power Amplifiers

This paper presents the results of elaboration of 0.8-2.5 GHz SiC-based amplifiers with output power 10 & 20 W at 1 dB gain compression, as well as efficient nonlinear model of CRF24010 (Cree Inc.) transistor, simulation results, design and experimental characteristics of two amplifier chains (s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Kistchinsky, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Gallium nitride
Helium
IEEE catalog
Microwave technology
Organizing
Power amplifiers
Roentgenium
Silicon carbide
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Beschreibung
Zusammenfassung:This paper presents the results of elaboration of 0.8-2.5 GHz SiC-based amplifiers with output power 10 & 20 W at 1 dB gain compression, as well as efficient nonlinear model of CRF24010 (Cree Inc.) transistor, simulation results, design and experimental characteristics of two amplifier chains (single-ended and balanced). Both amplifiers have ultra-small sizes (4.8 and 9.6 cm 2 ) and good electric performance
DOI:10.1109/CRMICO.2006.256346