Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure

Influence of Gate Bias on Surface Roughness Scattering Rate in GaAs/AlAs Transistor Structure

The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Borzdov, A.V., Pozdnyakov, D.V., Galenchik, V.O., Borzdov, V.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrons
Gallium arsenide
Rough surfaces
Scattering
Surface roughness
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The self-consistent calculation of surface roughness scattering rate in GaAs/AlAs transistor structure with one-dimensional electron gas has been performed taking into account the collisional broadening. The influence of the gate bias on the scattering rate is also studied
DOI:10.1109/CRMICO.2006.256145