Heat-Resistant Au-TiBx-n-GaN Schottky Diodes

We studied phase composition and parameters of the ohmic Au-TiB x -Al-Ti-n-GaN and barrier Au-TiB x -n-GaN contacts, both before and after rapid thermal annealing (RTA) at T=870degC for 30 s. The phase composition was studied with X-ray diffraction technique, while the parameters of the ohmic contac...

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Bibliographische Detailangaben

Hauptverfasser:	Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya, Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sveshnikov, Yu.N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electromagnetic heating Gallium nitride Gold III-V semiconductor materials Ohmic contacts Rapid thermal annealing Schottky diodes Semiconductor diodes X-ray diffraction X-ray scattering
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