Heat-Resistant Au-TiBx-n-GaN Schottky Diodes

We studied phase composition and parameters of the ohmic Au-TiB x -Al-Ti-n-GaN and barrier Au-TiB x -n-GaN contacts, both before and after rapid thermal annealing (RTA) at T=870degC for 30 s. The phase composition was studied with X-ray diffraction technique, while the parameters of the ohmic contacts were studied for the transmission line method (TLM) structures and those of the barrier contacts were studied by measuring the forward branches of I-V curves with further calculation of the Schottky barrier (SB) height phiB and ideality factor n. It was found that low-resistance (rho c ap(1divide3)times10 -6 Omegamiddotcm 2 ohmic Au-TiB x -Al-Ti-n-GaN contacts can be formed using RTA. It turned out also that, after RTA at T=870degC for 30s, the SB retains its barrier properties practically unchanged, as compared with the initial sample that has not been exposed to RTA