A Comparison between 63nm 8Gb and 90nm 4Gb Multi-Level Cell NAND Flash Memory for Mass Storage Application

This paper compares design concepts of 63nm-8Gb and 90nm-4Gb multilevel cell (MLC) NAND flash memory. For 8Gb MLC NAND flash memory, locations of peripheral circuits and charge pumps are determined to optimize area and signal speed. Page buffer is simplified by reducing the number of transistors wit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Dae-Seok Byeon, Sung-Soo Lee, Young-Ho Lim, Dongku Kang, Wook-Kee Han, Dong-Hwan Kim, Kang-Deog Suh
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Cellular phones Charge pumps Circuit noise Consumer electronics Costs Digital cameras Error correction codes Flash memory Packaging Universal Serial Bus
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