Study of Cu Migration-Induced Failure of Inter-Layer Dielectric

Study of Cu Migration-Induced Failure of Inter-Layer Dielectric

In order to reduce the RC delay problem, Cu interconnects are now widely used with low-k dielectrics. However, the migration of Cu into ILD (inter layer dielectrics) has been known as a major reliability concern under BTS (bias-temperature-stress) conditions. For the optimization of reliability of d...

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Bibliographische Detailangaben
Hauptverfasser: Sang-Soo Hwang, Sung-Yup Jung, Jung-Kyu Jung, Young-Chang Joo
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
Delay
Dielectric breakdown
Dielectric devices
Electric breakdown
Electrodes
Failure analysis
Materials science and technology
Reliability theory
Testing
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Beschreibung
Zusammenfassung:In order to reduce the RC delay problem, Cu interconnects are now widely used with low-k dielectrics. However, the migration of Cu into ILD (inter layer dielectrics) has been known as a major reliability concern under BTS (bias-temperature-stress) conditions. For the optimization of reliability of devices based on Cu interconnects with low-k dielectrics, theoretical and quantitative understanding of Cu migration induced dielectric breakdown mechanism is needed
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251318