Impact of untreated thicker CVD TiN film at a Via glue layer on Rc Performance in 0.15um CMOS Technology

Impact of untreated thicker CVD TiN film at a Via glue layer on Rc Performance in 0.15um CMOS Technology

In this work, it is reported that the mechanism was studied on abnormal via contact resistance (Rc) and the promising solutions to improve via Rc were proposed. We found out that via Rc is very sensitive to CVDTiN plasma treatment efficiency and also a slight fluctuation of CVDTiN thickness could si...

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Hauptverfasser: Kyeong Sik Lee, Nam Sung Kim, Jun Liu, Jung Wook Shin, Woo Kah Chin, Yungui Li, Young Seon You, Tan, J., Hyun Gu Yoon, Sang Hyun Han
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical vapor deposition
CMOS technology
Plasma applications
Plasma chemistry
Plasma measurements
Plasma properties
Plasma temperature
Radio frequency
Robustness
Tin
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Beschreibung
Zusammenfassung:In this work, it is reported that the mechanism was studied on abnormal via contact resistance (Rc) and the promising solutions to improve via Rc were proposed. We found out that via Rc is very sensitive to CVDTiN plasma treatment efficiency and also a slight fluctuation of CVDTiN thickness could significantly increase the amount of untreated CVDTiN film, leading to higher via Rc. This paper focuses on the impact of untreated thicker CVDTiN film at a via glue layer and the improvement solution of via Rc
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251304