Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application
The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al...
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| creator | Sasse, G.T. Schmitz, J. |
| description | The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states |
| doi_str_mv | 10.1109/RELPHY.2006.251295 |
| format | Conference Proceeding |
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Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 9780780394988</identifier><identifier>ISBN: 0780394984</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9780780394995</identifier><identifier>EISBN: 0780394992</identifier><identifier>DOI: 10.1109/RELPHY.2006.251295</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge measurement ; charge pumping ; Charge pumps ; Current measurement ; Dielectric measurements ; Interface states ; Radio frequency ; RF signals ; Signal generators ; trap response ; Tunneling ; Voltage</subject><ispartof>2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.627-628</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4017236$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4017236$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sasse, G.T.</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><title>Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application</title><title>2006 IEEE International Reliability Physics Symposium Proceedings</title><addtitle>RELPHY</addtitle><description>The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states</description><subject>Charge measurement</subject><subject>charge pumping</subject><subject>Charge pumps</subject><subject>Current measurement</subject><subject>Dielectric measurements</subject><subject>Interface states</subject><subject>Radio frequency</subject><subject>RF signals</subject><subject>Signal generators</subject><subject>trap response</subject><subject>Tunneling</subject><subject>Voltage</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>9780780394988</isbn><isbn>0780394984</isbn><isbn>9780780394995</isbn><isbn>0780394992</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1Kw0AUhcc_sNS-gG7mAUy9dybz566UVoVKS6kLV2WSuWlH2iQm6aJvb0A3woGz-OBwzmHsHmGMCO5pPVusXj_HAkCPhULh1AUbOWOhl3Spc-qSDdBJm6B1ePWPWXvdM5ViYkDoWzZq2y8AQKOlFWLAltO9b3bEV6djHcsd9x1f-xArPm_o-0RlHql95u_U7atQHard-ZFvGl_zNbV1VbbEfRn4pK4PMfddrMo7dlP4Q0ujPx-yj_lsM31NFsuXt-lkkUQ0qktQKelDbi0gWJkbkiHTHqyjoPr2mbZCFehMoTMCTHWaFbmROuQp9gcEL4fs4Tc3EtG2buLRN-dt2g8TUssfeeRT8w</recordid><startdate>200603</startdate><enddate>200603</enddate><creator>Sasse, G.T.</creator><creator>Schmitz, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200603</creationdate><title>Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application</title><author>Sasse, G.T. ; Schmitz, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-1553adc8801083c7e3db6a089ed5978b6825f197f6be01464bfc736dc41512da3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Charge measurement</topic><topic>charge pumping</topic><topic>Charge pumps</topic><topic>Current measurement</topic><topic>Dielectric measurements</topic><topic>Interface states</topic><topic>Radio frequency</topic><topic>RF signals</topic><topic>Signal generators</topic><topic>trap response</topic><topic>Tunneling</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Sasse, G.T.</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sasse, G.T.</au><au>Schmitz, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application</atitle><btitle>2006 IEEE International Reliability Physics Symposium Proceedings</btitle><stitle>RELPHY</stitle><date>2006-03</date><risdate>2006</risdate><spage>627</spage><epage>628</epage><pages>627-628</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>9780780394988</isbn><isbn>0780394984</isbn><eisbn>9780780394995</eisbn><eisbn>0780394992</eisbn><abstract>The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2006.251295</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 1541-7026 |
| ispartof | 2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.627-628 |
| issn | 1541-7026 1938-1891 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge measurement charge pumping Charge pumps Current measurement Dielectric measurements Interface states Radio frequency RF signals Signal generators trap response Tunneling Voltage |
| title | Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application |
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