Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application

Charge Pumping at Radio Frequencies: Methodology, Trap Response and Application

The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al...

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Bibliographische Detailangaben
Hauptverfasser: Sasse, G.T., Schmitz, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge measurement
charge pumping
Charge pumps
Current measurement
Dielectric measurements
Interface states
Radio frequency
RF signals
Signal generators
trap response
Tunneling
Voltage
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Beschreibung
Zusammenfassung:The charge pumping (CP) technique is known for its high accuracy of determining the interface state density on MOS devices according to G. Groeseneken et al. (1984). With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [Masson, P et al., 1999]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251295