Successful Development and Implementation of Statistical Outlier Techniques on 90nm and 65nm Process Driver Devices
Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are continually sought. Traditional outlier screens such as fixed-limit analyses with parametric or non-parametric statistics, when applied...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are continually sought. Traditional outlier screens such as fixed-limit analyses with parametric or non-parametric statistics, when applied to the newest technologies, result in excessive Type I or II errors which cannot be tolerated. In this paper, we describe the results from applying statistical burn-in avoidance techniques using time-zero sort test responses to driver designs fabricated in 90nm and 65nm low leakage technologies and libraries |
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ISSN: | 1541-7026 1938-1891 |
DOI: | 10.1109/RELPHY.2006.251278 |