Successful Development and Implementation of Statistical Outlier Techniques on 90nm and 65nm Process Driver Devices

Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are continually sought. Traditional outlier screens such as fixed-limit analyses with parametric or non-parametric statistics, when applied...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Butler, K.M., Subramaniam, S., Nahar, A., Carulli, J.M., Anderson, T.J., Daasch, W.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Burn-in and the concomitant post-burn-in retest are significant cost adders to the overall IC manufacturing and test process. Methods to reduce burn-in capacity are continually sought. Traditional outlier screens such as fixed-limit analyses with parametric or non-parametric statistics, when applied to the newest technologies, result in excessive Type I or II errors which cannot be tolerated. In this paper, we describe the results from applying statistical burn-in avoidance techniques using time-zero sort test responses to driver designs fabricated in 90nm and 65nm low leakage technologies and libraries
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251278