Oxide Thinning in Shallow Trench Isolation

Oxide Thinning in Shallow Trench Isolation

Aim of this work is to study the thinning of thick HV gate oxides in flash and embedded flash processes due to the shallow trench isolation (STI) induced stress on oxide growth

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Bibliographische Detailangaben
Hauptverfasser: Ghidini, G., Bottini, R., Brazzelli, D., Galbiati, N., Mica, I., Morini, A., Pavan, A., Polignano, M.L., Vitali, M.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitors
Compressive stress
Current density
Oxidation
Research and development
Residual stresses
Temperature
Tensile stress
Testing
Voltage
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Beschreibung
Zusammenfassung:Aim of this work is to study the thinning of thick HV gate oxides in flash and embedded flash processes due to the shallow trench isolation (STI) induced stress on oxide growth
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2006.251248