Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique

Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stre...

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Hauptverfasser:	Cheng, C.C., Tu, K.C., Tahui Wang, Hsieh, T.S., Tzeng, J.T., Jong, Y.C., Liou, R.S., Pan, S.C., Hsu, S.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge pumping Charge pumps CMOS process CMOS technology Current measurement Degradation Frequency measurement Hot carriers LDMOS Oxide damage regions Stress Switches Threshold voltage trap density
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