Investigation of Hot Carrier Degradation Modes in LDMOS by using a Novel Three-Region Charge Pumping Technique

Hot carrier stress induced oxide degradation in n-LDMOS is investigated by using a novel three-region charge pumping technique. This technique allows us to locate oxide damage area in various stress modes and gain insight into trap creation properties. Our characterization shows that a max. I g stress causes a largest drain current and subthreshold slope degradation because of both interface trap (N it ) generation in the channel region and negative bulk oxide charge (Q ox ) creation in the bird's beak region. The density of N it and Q ox can be separately extracted from the proposed charge pumping method. A numerical device simulation is performed to confirm our result