100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2 /TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellen...

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Hauptverfasser: Fei Gao, Balakumar, S., Li Rui, Lee, S.J., Chih-Hang Tung, Anyan Du, Sudhiranjan, T., Dim-Lee Kwong, Hwang, W.S., Balasubramanian, N., Lo, P., Chi Dong-Zhi
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amorphous materials
Fabrication
Germanium silicon alloys
Hafnium
MOSFET circuits
Oxidation
Semiconductor films
Silicon germanium
Substrates
Temperature
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Beschreibung
Zusammenfassung:Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2 /TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2006.251052