A 71.9% power-added-efficiency inverse Class-FLDMOS

Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ouyahia, A., Duperrier, C., Tolant, C., Temcamani, F., Eudeline, Ph
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Design methodology Frequency Gain measurement high efficiency High power amplifiers Impedance Inverse Class-F LDMOS Operational amplifiers Performance gain Power amplifiers Power generation Power measurement
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