A 71.9% power-added-efficiency inverse Class-FLDMOS
Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmo...
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| creator | Ouyahia, A. Duperrier, C. Tolant, C. Temcamani, F. Eudeline, Ph |
| description | Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage power amplifier demonstrate at 2dB power gain compression: 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier |
| doi_str_mv | 10.1109/MWSYM.2006.249607 |
| format | Conference Proceeding |
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These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier</description><subject>Design methodology</subject><subject>Frequency</subject><subject>Gain measurement</subject><subject>high efficiency</subject><subject>High power amplifiers</subject><subject>Impedance</subject><subject>Inverse Class-F</subject><subject>LDMOS</subject><subject>Operational amplifiers</subject><subject>Performance gain</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Power measurement</subject><issn>0149-645X</issn><isbn>0780395417</isbn><isbn>9780780395411</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9yT0LgkAYAOCDCrKPHxAttzSevXfeqTeGJQ1Jg0E1yaGvcGEmHhT--5bmpmd4CFlx8DkHvc2u-T3zBUDoC6lDiEZkBlEMgVaSR2PiAZeahVLdpmTm3AMAVMxDjwQ7GnFfb2j3-mDPTFVhxbCubWmxLQdq2zf2DmnSGOdYetpn53xBJrVpHC5_zsk6PVySI7OIWHS9fZp-KCRwJYQO_u8X9rkzfA</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Ouyahia, A.</creator><creator>Duperrier, C.</creator><creator>Tolant, C.</creator><creator>Temcamani, F.</creator><creator>Eudeline, Ph</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>A 71.9% power-added-efficiency inverse Class-FLDMOS</title><author>Ouyahia, A. ; Duperrier, C. ; Tolant, C. ; Temcamani, F. ; Eudeline, Ph</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_40152293</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Design methodology</topic><topic>Frequency</topic><topic>Gain measurement</topic><topic>high efficiency</topic><topic>High power amplifiers</topic><topic>Impedance</topic><topic>Inverse Class-F</topic><topic>LDMOS</topic><topic>Operational amplifiers</topic><topic>Performance gain</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Power measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Ouyahia, A.</creatorcontrib><creatorcontrib>Duperrier, C.</creatorcontrib><creatorcontrib>Tolant, C.</creatorcontrib><creatorcontrib>Temcamani, F.</creatorcontrib><creatorcontrib>Eudeline, Ph</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ouyahia, A.</au><au>Duperrier, C.</au><au>Tolant, C.</au><au>Temcamani, F.</au><au>Eudeline, Ph</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 71.9% power-added-efficiency inverse Class-FLDMOS</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>1542</spage><epage>1545</epage><pages>1542-1545</pages><issn>0149-645X</issn><isbn>0780395417</isbn><isbn>9780780395411</isbn><abstract>Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage power amplifier demonstrate at 2dB power gain compression: 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249607</doi></addata></record> |
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| issn | 0149-645X |
| language | eng |
| recordid | cdi_ieee_primary_4015229 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Design methodology Frequency Gain measurement high efficiency High power amplifiers Impedance Inverse Class-F LDMOS Operational amplifiers Performance gain Power amplifiers Power generation Power measurement |
| title | A 71.9% power-added-efficiency inverse Class-FLDMOS |
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