3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers
The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric m...
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| creator | Courreges, S. Giraud, S. Cros, D. Madrangeas, V. Aubourg, M. |
| description | The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers |
| doi_str_mv | 10.1109/MWSYM.2006.249921 |
| format | Conference Proceeding |
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Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780395411</identifier><identifier>ISBN: 0780395417</identifier><identifier>DOI: 10.1109/MWSYM.2006.249921</identifier><language>eng</language><publisher>IEEE</publisher><subject>characterization ; Electromagnetic analysis ; Ferroelectric materials ; ferroelectric thin-film ; Method of Line ; Microstrip ; Microwave devices ; Microwave theory and techniques ; microwaves devices ; Permittivity ; Substrates ; Thin film devices ; Transistors ; Voltage</subject><ispartof>2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1037-1040</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4015096$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4015096$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Courreges, S.</creatorcontrib><creatorcontrib>Giraud, S.</creatorcontrib><creatorcontrib>Cros, D.</creatorcontrib><creatorcontrib>Madrangeas, V.</creatorcontrib><creatorcontrib>Aubourg, M.</creatorcontrib><title>3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers</title><title>2006 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. 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First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers</description><subject>characterization</subject><subject>Electromagnetic analysis</subject><subject>Ferroelectric materials</subject><subject>ferroelectric thin-film</subject><subject>Method of Line</subject><subject>Microstrip</subject><subject>Microwave devices</subject><subject>Microwave theory and techniques</subject><subject>microwaves devices</subject><subject>Permittivity</subject><subject>Substrates</subject><subject>Thin film devices</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNplkN1Kw0AQhRdUsNY-gHizL5A6-5dkvZP6Cy1eqKhXZZNMzMo2CbuxEh_Fp3Wl3gkDh-HM-Q4MIScM5oyBPls9P7yu5hwgnXOpNWd7ZKazHOIIrSRj-2QCTOoklerlkByF8A4AKmfphHyLS2pa48ZgA-1qWqP3HTosB29LOjS2TWrrNrR38crTjS1992m2SCvc2hID_Qi2faMrHJqu-gUsbYv0nJq-d7Y0g-1aOnQRFBNja2Kelo3xphzQ26-d_6_WmRF9OCYHtXEBZ386JU_XV4-L22R5f3O3uFgmlmVqSISslOG1VDznKlWFhlxijgVUMi1MpiU3GHdQ8TegRMWFzKOZK1WwjKeZmJLTHdci4rr3dmP8uJbAFOhU_ADQ5GqX</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Courreges, S.</creator><creator>Giraud, S.</creator><creator>Cros, D.</creator><creator>Madrangeas, V.</creator><creator>Aubourg, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200606</creationdate><title>3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers</title><author>Courreges, S. ; Giraud, S. ; Cros, D. ; Madrangeas, V. ; Aubourg, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-34d5a2f45282565b9084e8eb0d46ba7942aee8e05249053d2348b0d855b172673</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>characterization</topic><topic>Electromagnetic analysis</topic><topic>Ferroelectric materials</topic><topic>ferroelectric thin-film</topic><topic>Method of Line</topic><topic>Microstrip</topic><topic>Microwave devices</topic><topic>Microwave theory and techniques</topic><topic>microwaves devices</topic><topic>Permittivity</topic><topic>Substrates</topic><topic>Thin film devices</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Courreges, S.</creatorcontrib><creatorcontrib>Giraud, S.</creatorcontrib><creatorcontrib>Cros, D.</creatorcontrib><creatorcontrib>Madrangeas, V.</creatorcontrib><creatorcontrib>Aubourg, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Courreges, S.</au><au>Giraud, S.</au><au>Cros, D.</au><au>Madrangeas, V.</au><au>Aubourg, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers</atitle><btitle>2006 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2006-06</date><risdate>2006</risdate><spage>1037</spage><epage>1040</epage><pages>1037-1040</pages><issn>0149-645X</issn><isbn>9780780395411</isbn><isbn>0780395417</isbn><abstract>The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2006.249921</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1037-1040 |
| issn | 0149-645X |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | characterization Electromagnetic analysis Ferroelectric materials ferroelectric thin-film Method of Line Microstrip Microwave devices Microwave theory and techniques microwaves devices Permittivity Substrates Thin film devices Transistors Voltage |
| title | 3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers |
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