3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers

The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric m...

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Hauptverfasser: Courreges, S., Giraud, S., Cros, D., Madrangeas, V., Aubourg, M.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers
ISSN:0149-645X
DOI:10.1109/MWSYM.2006.249921