Subthreshold Operation of a Monolithically Integrated Strained-Si Current Mirror at Low Temperatures

The dc operation of a simple current mirror built with two monolithically integrated strained-Si (s-Si) MOSFETs operating in the subthreshold region is studied as a function of temperature. At room temperature, the log-log current relationship is linear over 4 dec. The consumed power is approximatel...

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Veröffentlicht in:	IEEE transactions on circuits and systems. 2, Analog and digital signal processing Analog and digital signal processing, 2006-11, Vol.53 (11), p.1215-1219
Hauptverfasser:	Fobelets, K., Gaspari, V., Ding, P.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Blocking Circuit stability Circuits Consumption Cost engineering Costs Cryogenic operation current mirror Current mirrors Frequency estimation Linearity Mirrors MOSFETs Silicon strained-Si (s-Si) MOSFET Temperature control Threshold voltage Voltage control
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Zusammenfassung:	The dc operation of a simple current mirror built with two monolithically integrated strained-Si (s-Si) MOSFETs operating in the subthreshold region is studied as a function of temperature. At room temperature, the log-log current relationship is linear over 4 dec. The consumed power is approximately 100 muW at 300 K but only 1 nW at 160 K. The cost of this reduction in power is a reduced linear log-log current range. Reducing the temperature further increases the threshold voltage, obstructing operation below 160 K. A comparison is made with the Si control circuit, highlighting the improved linearity and the threshold voltage stability in the s-Si circuit. The estimated cutoff frequency of the subthreshold strained-Si current mirror at 300 K is 50 MHz, compared to 10 kHz for the Si MOSFETs
ISSN:	1549-7747 1057-7130 1558-3791
DOI:	10.1109/TCSII.2006.882365