High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Several millimeter-wave MMICs were fabricated successfully using 0.16 /spl mu/m pseudomorphic MODFET technology. A five-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrowband three-stage low noise amplifier...

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Bibliographische Detailangaben
Hauptverfasser: Braunstein, J., Schlechtweg, M., Tasker, P.J., Reinert, W., Hulsmann, A., Kohler, K., Bronner, W., Bosch, R., Haydl, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Distributed amplifiers
Frequency
Gain
HEMTs
Millimeter wave technology
Millimeter wave transistors
MMICs
MODFETs
Noise figure
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Zusammenfassung:Several millimeter-wave MMICs were fabricated successfully using 0.16 /spl mu/m pseudomorphic MODFET technology. A five-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrowband three-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz*dB.< >
DOI:10.1109/GAAS.1993.394452