A fast measurement technique for the determination of small signal parameters of the bipolar transistor

A fast measurement technique for the determination of small signal parameters of the bipolar transistor

The author deals with the measurement of small-signal parameters for modern bipolar transistors. The proposed method uses the measurement of S parameters, mathematical conversion of these S parameters to H parameters, and the circle-fit method. Since modern transistors are to be measured at low DC c...

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Bibliographische Detailangaben
1. Verfasser: Vandeloo, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Capacitance
Current measurement
Electrical resistance measurement
Frequency
Measurement techniques
Noise measurement
Scattering parameters
Time measurement
Transconductance
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Beschreibung
Zusammenfassung:The author deals with the measurement of small-signal parameters for modern bipolar transistors. The proposed method uses the measurement of S parameters, mathematical conversion of these S parameters to H parameters, and the circle-fit method. Since modern transistors are to be measured at low DC currents, common base measurements are preferred over common emitter measurements. How the circle-fit method can be used to extract the small-signal parameters is indicated.< >
DOI:10.1109/ICMTS.1989.39287