W-band high efficiency InP-based power HEMT with 600 GHz fmax

W-band high efficiency InP-based power HEMT with 600 GHz fmax

We have developed 0.1-μm gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 μm gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated f max of 600 GHz is the highest reported to dat...

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Veröffentlicht in:IEEE microwave and guided wave letters 1995-07, Vol.5 (7), p.230-232
Hauptverfasser: Smith, P.M., Liu, S.-M.J., Kao, M.-Y., Ho, P., Wang, S.C., Duh, K.H.G., Fu, S.T., Chao, P.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Chaos
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gain
HEMTs
Indium gallium arsenide
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MMICs
MODFETs
PHEMTs
Power amplifiers
Power generation
Power transistors
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Zusammenfassung:We have developed 0.1-μm gate-length InAlAs-InGaAs-InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 μm gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated f max of 600 GHz is the highest reported to date for any transistor, and smaller, 30-μm devices fabricated on the same wafer exhibit excellent noise figure (1.4 dB at 94 GHz), demonstrating the applicability of this technology to multifunction MMICs.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.392284