Impedance characteristics of quantum-well lasers

Impedance characteristics of quantum-well lasers

We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model. These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission. T...

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Veröffentlicht in:IEEE photonics technology letters 1994-12, Vol.6 (12), p.1421-1423
Hauptverfasser: Weisser, S., Esquivias, I., Tasker, P.J., Ralston, J.D., Romero, B., Rosenzweig, J.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier lifetime
Equations
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Impedance measurement
Laser modes
Laser theory
Lasers
Life estimation
Optics
Physics
Quantum well devices
Quantum well lasers
Semiconductor lasers
laser diodes
Time measurement
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Beschreibung
Zusammenfassung:We derive theoretical expressions for the impedance of quantum-well lasers below and above threshold based on a simple rate equation model. These electrical laser characteristics are shown to be dominated by purely electrical parameters related to carrier capture/transport and carrier re-emission. The results of on-wafer measurements of the impedance of high-speed In/sub 0.35/Ga/sub 0.65/As/GaAs multiple-quantum-well lasers are shown to be in good agreement with this simple model, allowing us to extract the effective carrier escape time and the effective carrier lifetime, and to estimate the effective carrier capture/transport time.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.392224