Electro-optic imaging of internal fields in (111) GaAs photoconductors

Electro-optic imaging of internal fields in (111) GaAs photoconductors

The nonuniform electric field in a surface (111) GaAs photoconductor was imaged for the first time using the electro-optic effect of the device itself. The technique used a mode-locked 1.06 /spl mu/m laser with 150 ps pulses to transiently probe the electric field profile at various times following...

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Veröffentlicht in:IEEE Transactions on Electron Devices 1995-06, Vol.42 (6), p.1081-1085
Hauptverfasser: Adams, J.C., Falk, R.A., Ferrier, S.G., Capps, C.D.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
ELECTRIC FIELDS
Electric variables measurement
ELECTRO-OPTICAL EFFECTS
Electronics
ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
Exact sciences and technology
Gallium arsenide
GALLIUM ARSENIDES
Laser beam cutting
LASER RADIATION
Lasers and electrooptics
Nonlinear optics
Optical pulses
Optical sensors
Optoelectronic devices
PHOTOCONDUCTIVITY
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SEMICONDUCTOR SWITCHES
Switches
Voltage
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Beschreibung
Zusammenfassung:The nonuniform electric field in a surface (111) GaAs photoconductor was imaged for the first time using the electro-optic effect of the device itself. The technique used a mode-locked 1.06 /spl mu/m laser with 150 ps pulses to transiently probe the electric field profile at various times following application of a synchronized pulsed voltage bias.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.387240