A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT's

The InP high electron mobility transistor (HEMT) is an attractive vehicle for the realization of future electronic and optoelectronic integrated circuits (OEICs). However, detrimental effects labeled parasitic effects are a limiting factor for monolithic integration. Molecular beam epitaxy (MBE)-grown lattice-matched InAlAs/InGaAs/InAlAs HEMTs have been investigated. Three major parasitic effects have been studied: the kink, gate and drain lag effects. Electrical measurements and trap characterizations are reported. This study brings further evidence that MBE-grown InP HEMTs are not very sensitive to in-bulk trap-related parasitic effects as opposed to similar GaAs devices. However surface passivation and improvements must be carried out to reduce the gate lag effect.< >