Physical modeling and experimental study of the InP MISFET for power applications

Physical modeling and experimental study of the InP MISFET for power applications

A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwav...

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Hauptverfasser: Mouatakif, I., DeJaeger, J.C., Lefebvre, M., Salmer, G., Post, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier density
Computational modeling
Dielectrics and electrical insulation
Difference equations
Hydrodynamics
Indium phosphide
Microwave devices
MISFETs
Poisson equations
Power measurement
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Zusammenfassung:A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench.< >
DOI:10.1109/ICIPRM.1993.380588