MBE grown strained and unstrained InGaAs/InAlGaAs MQW lasers

MBE grown strained and unstrained InGaAs/InAlGaAs MQW lasers

The authors demonstrated the growth and reproducibility of various molecular beam epitaxy InAlGaAs/InGaAs 1.5/spl mu/m separate confinement heterostructure and graded index separate confinement heterostructure multi quantum well (MQW) laser diodes with lattice matched or compressively strained QWs....

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Hauptverfasser: Steinhagen, F., Losch, R., Schlapp, W., Nickel, H., Hansmann, S., Hillmer, H., Janning, H., Hartnagel, H.L., Burkhard, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diode lasers
Distributed feedback devices
Indium gallium arsenide
Laser feedback
Lattices
Molecular beam epitaxial growth
Potential well
Quantum well devices
Quantum well lasers
Reproducibility of results
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Zusammenfassung:The authors demonstrated the growth and reproducibility of various molecular beam epitaxy InAlGaAs/InGaAs 1.5/spl mu/m separate confinement heterostructure and graded index separate confinement heterostructure multi quantum well (MQW) laser diodes with lattice matched or compressively strained QWs. Various fundamental material and laser properties were studied for Fabry Perot and distributed feedback lasers. Epitaxial regrowth on Al-containing layers is described.< >
DOI:10.1109/ICIPRM.1993.380562