Plasma resistant modified I-line, deep UV, and e-beam resists

Plasma resistant modified I-line, deep UV, and e-beam resists

This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 /spl mu/m resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds...

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Veröffentlicht in:IEEE transactions on components, packaging, and manufacturing technology. Part A packaging, and manufacturing technology. Part A, 1995-03, Vol.18 (1), p.195-200
Hauptverfasser: Bousaba, J.E., Tranjan, F.M., Qushair, L.E., DuBois, T.D., Bobbio, S.M., Jose, M.T., Nickel, J.L., Jones, S.K., Dudley, B.W.
Format: Artikel
Sprache:eng
Schlagworte:
Etching
Nickel
Optical films
Plasma applications
Plasma chemistry
Plasma materials processing
Polyimides
Resists
Silicon
Substrates
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Zusammenfassung:This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 /spl mu/m resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the oxygen, fluorine, and chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g., polyimide, SiO/sub 2/, etc.).< >
ISSN:1070-9886
1558-3678
DOI:10.1109/95.370755