Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processe...

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Veröffentlicht in:	IEEE transactions on electron devices 1995-03, Vol.42 (3), p.455-468
Hauptverfasser:	Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbe, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Epitaxial growth Fabrication Germanium silicon alloys Heterojunction bipolar transistors Physics Semiconductor films Semiconductor materials Silicon germanium Sun
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