Plasma resistant modified I-line, deep UV and E-beam resists
This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds inc...
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| creator | Bousaba, J.E. Tranjan, F.M. Qushair, L.E. DuBois, T.D. Bobbio, S.M. Jose, M.T. Nickel, J.L. Jones, S.K. Dudley, B. |
| description | This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).< > |
| doi_str_mv | 10.1109/ECTC.1994.367592 |
| format | Conference Proceeding |
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The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).< ></description><identifier>ISBN: 9780780309142</identifier><identifier>ISBN: 0780309146</identifier><identifier>DOI: 10.1109/ECTC.1994.367592</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical technology ; Etching ; Oxygen ; Plasma applications ; Plasma chemistry ; Plasma materials processing ; Plasma properties ; Polyimides ; Resists ; Silicon</subject><ispartof>1994 Proceedings. 44th Electronic Components and Technology Conference, 1994, p.712-715</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/367592$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/367592$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bousaba, J.E.</creatorcontrib><creatorcontrib>Tranjan, F.M.</creatorcontrib><creatorcontrib>Qushair, L.E.</creatorcontrib><creatorcontrib>DuBois, T.D.</creatorcontrib><creatorcontrib>Bobbio, S.M.</creatorcontrib><creatorcontrib>Jose, M.T.</creatorcontrib><creatorcontrib>Nickel, J.L.</creatorcontrib><creatorcontrib>Jones, S.K.</creatorcontrib><creatorcontrib>Dudley, B.</creatorcontrib><title>Plasma resistant modified I-line, deep UV and E-beam resists</title><title>1994 Proceedings. 44th Electronic Components and Technology Conference</title><addtitle>ECTC</addtitle><description>This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).< ></description><subject>Chemical technology</subject><subject>Etching</subject><subject>Oxygen</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Plasma materials processing</subject><subject>Plasma properties</subject><subject>Polyimides</subject><subject>Resists</subject><subject>Silicon</subject><isbn>9780780309142</isbn><isbn>0780309146</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FKxDAURQMiKGP34iofYGvykjYJuJFSnYEBXcy4HV6aF4i0dWi68e8tzFwunM3hwmXsUYpKSuFeuvbQVtI5XanG1A5uWOGMFWuVcFLDHSty_hFrdC3B6nv2-jVgHpHPlFNecFr4-BtSTBT4rhzSRM88EJ358ZvjFHhXesLxaucHdhtxyFRcuWHH9-7Qbsv958eufduXSRpYyh6titZL6zSs0BGCMOgtUOwb7Xzda98YSwpVhLqPoIOz0UeHKqAJoDbs6bKbiOh0ntOI89_pclH9AyLORfQ</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Bousaba, J.E.</creator><creator>Tranjan, F.M.</creator><creator>Qushair, L.E.</creator><creator>DuBois, T.D.</creator><creator>Bobbio, S.M.</creator><creator>Jose, M.T.</creator><creator>Nickel, J.L.</creator><creator>Jones, S.K.</creator><creator>Dudley, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Plasma resistant modified I-line, deep UV and E-beam resists</title><author>Bousaba, J.E. ; Tranjan, F.M. ; Qushair, L.E. ; DuBois, T.D. ; Bobbio, S.M. ; Jose, M.T. ; Nickel, J.L. ; Jones, S.K. ; Dudley, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-ca83f8b189428b14f2d07ab82efc649b5c4b678e3a3f25cf24d98fbf9a3da7d23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Chemical technology</topic><topic>Etching</topic><topic>Oxygen</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Plasma materials processing</topic><topic>Plasma properties</topic><topic>Polyimides</topic><topic>Resists</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Bousaba, J.E.</creatorcontrib><creatorcontrib>Tranjan, F.M.</creatorcontrib><creatorcontrib>Qushair, L.E.</creatorcontrib><creatorcontrib>DuBois, T.D.</creatorcontrib><creatorcontrib>Bobbio, S.M.</creatorcontrib><creatorcontrib>Jose, M.T.</creatorcontrib><creatorcontrib>Nickel, J.L.</creatorcontrib><creatorcontrib>Jones, S.K.</creatorcontrib><creatorcontrib>Dudley, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bousaba, J.E.</au><au>Tranjan, F.M.</au><au>Qushair, L.E.</au><au>DuBois, T.D.</au><au>Bobbio, S.M.</au><au>Jose, M.T.</au><au>Nickel, J.L.</au><au>Jones, S.K.</au><au>Dudley, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Plasma resistant modified I-line, deep UV and E-beam resists</atitle><btitle>1994 Proceedings. 44th Electronic Components and Technology Conference</btitle><stitle>ECTC</stitle><date>1994</date><risdate>1994</risdate><spage>712</spage><epage>715</epage><pages>712-715</pages><isbn>9780780309142</isbn><isbn>0780309146</isbn><abstract>This paper presents chemically modified photoresists for use as plasma etch masks over various substrates during patterning in IC manufacturing with sub-0.5 micron resolution. The modification consists of directly adding the modifying compounds into the photoresist solutions. The added compounds increase the Oxygen, Fluorine and Chlorine plasma resistance of photoresists, thus promoting a high etch rate selectivity with respect to other substrates and films (e.g. polyimide, PMGI, oxide, etc.).< ></abstract><pub>IEEE</pub><doi>10.1109/ECTC.1994.367592</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780780309142 |
| ispartof | 1994 Proceedings. 44th Electronic Components and Technology Conference, 1994, p.712-715 |
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| language | eng |
| recordid | cdi_ieee_primary_367592 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical technology Etching Oxygen Plasma applications Plasma chemistry Plasma materials processing Plasma properties Polyimides Resists Silicon |
| title | Plasma resistant modified I-line, deep UV and E-beam resists |
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